A new technical paper entitled “Simulation of vertically stacked 2-D nano-leaf feed” was published by researchers at the University of Di Pisa and Technical Vienna.
Abstract
“We present a simulation study with vertically stacked 2-D nano-leaf field effect transistors (NSFETS). The aim of this investigation is to evaluate the performance and potential of FinFet alternatives, i.e. Nanosheet-Fet with Gate-All-Around (GAA) in the ultimate nano-leaf thickness using 2D materials (2DMS). In particular, our numerical study specifically examines the potential of multi -layered vertically stacked GAA -MOS2 Fets taking into account various geometries and device parameters (e.g. number of stacked nano leaves, spacer dimensions, doping, etc.) with the aim of providing guidelines for obtaining high-performance equipment. The effects of contact resistance and line roughness (LER), which significantly influence the total performance of NSFET, are considered. Finally, the circuit performance was contaminated by calculating the energy per switch and the worst case delay of a 32-bit full-adoder circuit circuit. “
Here you will find the technical paper. February 2025.
PK Dubey, D. Marian, A. Toral-Lopez, T. Knobloch, T. Grasser and G. Fiori, “Simulation of vertically stacked 2-D nano-leaf scraps”, in IEEE transactions on electron devices, DOI: 10.1109/Ted. 2025.3533474.