Renesas has introduced new 100V high-performance MOSFETs – the RBA300N10EANS-3UA02 and RBA300N10EHPF-5UA02 – based on a new semiconductor process to help designers achieve new efficiency advantages.
New Renesas transistors are intended for electric vehicles, e-bikes and many other applications thanks to improved efficiency and size reduction.
As global electrification continues, designers often struggle with the physical limitations of switching efficiency, such as: B. the on-resistance or the gate charge. Renesas claims its latest MOSFEET series gives designers new tools for building better and smaller power devices.
The REXFET-1 process
At the heart of the new Renesas offerings is a new process technology, the REXFET-1, to ensure maximum efficiency.
When developing these devices, Renesas focused on on-resistance and switching efficiency. The result is a split-gate trench architecture that reportedly improves the efficiency of the resulting FETs but allows them to be integrated into a much smaller package.
Renesas' split-gate architecture is intended to provide better efficiency and switching times.
The new FETs from Renesas are available in both TOLL (3UA02) and TOLG (5UA02) packages. Compared to standard packages like the TO-263, the TOLL and TOLG packages are 50% smaller, allowing designers to integrate more transistors in the same area. The TOLL and TOLG packages are also pin-compatible with devices from other manufacturers, making the transition easier for engineers.
Switching and power efficiency
Thanks to the split-gate topology, the Ron index of REXFET-1 transistors is reduced to 0.24, providing designers with a minimum on-resistance of 1.5 mΩ. This low operating resistance helps reduce steady-state power loss over the wide 100V, 340A operating range.
In addition to the on-resistance, the REXFET-1 MOSFETs also feature improved switching performance. Qg has been reduced by 10% compared to previous generations, while Qgd has been reduced by 40%. These reductions are directly related to faster switching, resulting in greater efficiency gains.
Development resources for high-performance designs
An evaluation board and two reference designs are already available for developers using the REXFET-1 process. These resources can not only help highlight the capabilities of the new Renesas transistors, but also help bring products to market faster.
The Power Transistor Evaluation Board allows designers to gain first-hand experience with Renesas' latest offerings (circled on the board).
Although the difference between 2 mΩ and 1.5 mΩ may seem modest at first, the improvements in size and power efficiency of these new transistors are a major step toward more efficient power electronics. Renesas believes its latest transistors could find use in electric vehicles, charging stations, data centers and many other devices that require high-efficiency transistors in a smaller form factor.
All images used courtesy of Renesas.