A new technical paper entitled “First demonstration of high-performance and extremely stable W-DOTIE in2O3 Gate-All-Around (GAA) Nanosheet Fet ”was published by researchers at the Georgia Institute of Technology and Micron.
Abstract
“We demonstrate a gate -all around (GAA) fet with an atomic layer (ALD) Wolfram (W) -doped indium oxide (in2O3) or Indium -Wolframoxide (IWO), channel. A new type of sewer is being developed, with the agencies used with an etching electivity of more than 103 Between the channel and a metal victim layer (SL), which enables a lithography -independent definition of the device canal length (LCh). The manufactured nano -leaf scraps with scaled dimensions of LCh = 50 Nm and WNano leaf = 30 nm, draw a high current in the condition (iTO) of 815 μa/μm at VDS = 1 V and VG – VT = 3.5 V along with an Ultralow off-state current (iOUT OF) of 3 Fa. It is shownT) of 88 MV for a voltage voltage of VG – VT = 2.6 V, according to a voltage field (E)stress) of 5.4 mv/cm. “
Here you will find the technical paper. February 2025.
E. Sarkar et al., “First demonstration of high-performance and extremely stable W-doped in2o3 gate-all-around (GAA) nanosheet fet” in IEEE transactions on electron devices, DOI: 10.1109/TED.2025.3535463.